Gallium nitride process

From WikiCover

Announced November 15, 2007, RFMD has completed the technical qualification of its first generation 48V Gallium Nitride (GaN) process technology.

RFMD leveraged its existing manufacturing assets and proven expertise in high volume compound semiconductor design and fabrication to deliver the excellent thermal and RF performance of its new GaN process technology. Pre-production volume shipments of RFMD's 48V GaN technology have commenced to customers in multiple end markets.

RFMD's 48V GaN process technology is ideally suited to address the growing customer requirements for higher power, higher efficiency and wider bandwidth. The company is targeting multiple high-growth applications, including high- linearity CATV line amplifiers, military radar applications, wide bandwidth wireless infrastructure power amplifiers and power modules for revolutionary new high-lumen light generation applications.

RFMD's high efficiency, high power GaN process technology exhibits best-in-class RF performance at 48V with 5.6W/mm average Psat, over 60% average Peak PAE and 24dB average Small Signal Gain measured at 2.1GHz frequency. The intrinsic electrical properties and outstanding reliability of RFMD's GaN technology enable improvements over bandwidth, power and efficiency, versus currently available, conventional technologies. The median time to failure (MTTF) at 180 degrees Celsius (operating junction temperature) is calculated to be greater than 1x106 hours using three-temperature testing over multiple wafer lots.